to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors stbv32/b transister (npn) features z medium voltage capability z low spread of dynamic parameters z minimum lot-to-lot spread for reliable operation z very high switching speed applications z electronic ballasts for fluorescent lighting maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current 1 a p c collector power dissipation 1.1 w r ja thermal resistance from junction to ambient 114 /w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo * i c =1ma, i e =0 700 v collector-emitter breakdown voltage v (br)ceo * i c =10ma, i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =10ma, i c =0 9 v collector cut-off current i ceo v be =-1.5v, v ce =700v 1 ma emitter cut-off current i ebo v eb =7v, i c =0 100 a h fe(1) * v ce =2v, i c =0.5a 8 35 dc current gain h fe(2) * v ce =2v, i c =1a 5 25 v ce(sat)(1) * i c =0.5a, i b =0.1a 0.5 v v ce(sat)(2) * i c =1 a, i b =0.25a 1 v collector-emitter saturation voltage v ce(sat)(3) * i c =1.5a, i b =0.5a 1.5 v v be (sat)(1) * i c =0.5a, i b =0.1a 1 v base-emitter saturation voltage v be (sat)(2) * i c =1a, i b =0.25a 1.2 v *pulse test: pulse width 300 s, duty cycle 1.5%. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
0.1 1 10 1 10 100 1000 012345 0 100 200 300 400 500 600 700 20 40 60 80 100 120 0 2 4 6 8 10 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1 10 100 1000 1 10 100 0 200 400 600 800 1000 0.1 1 10 100 1000 1 10 100 1000 400 600 800 1 10 100 1000 10 100 1000 30 c ob /c ib ? ? v cb /v eb f=1mhz i c =0/i e =0 t a =25 c ob c ib capacitance c t (pf) collector-base voltage v cb /v eb (v) common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 30ma 27ma 24ma 21ma 18ma 15ma 6ma 9ma 12ma i b =3ma stbv32/b static characteristic common emitter vce=10v t a =25 collector current i c (ma) transition frequency f t (mhz) i c h fe ?? i c f t ?? p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v collector current i c (ma) base-emmiter voltage v be (v) i c ? ? v be t a = 2 5 t a = 1 0 0 common emitter v ce =2v =5,t a =100 =4,t a =100 =4,t a =25 =5,t a =25 base-emitter saturation voltage v besat (mv) collector curremt i c (ma) i c v besat ?? =5,t a =25 =3,t a =25 =4,t a =25 =3,t a =100 =4,t a =100 =5,t a =100 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
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